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Single-Chip Global Positioning System
Receiver Front-End
ABSOLUTE MAXIMUM RATINGS
V DD to GND ...........................................................-0.3V to +3.7V
All Other Pins to GND.................................-0.3V to (V DD + 0.3V)
RF LNA Input Power .......................................................+10dBm
Continuous Power Dissipation (T A = +70°C)
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Soldering Temperature (10s) ...........................................+300°C
48-Pin TQFP-EP (derate 12.5mW/°C above +70°C) ....100mW
CAUTION! ESD SENSITIVE DEVICE
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(MAX2742 EV kit, V DD = +2.4V to +3.6V, V SHDN = V DD , T A = -40°C to +85°C. Typical values are at V DD = +3V and T A = +25°C,
unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
CONDITIONS
V DD = +3.0V, T A = +25 ° C (Note 1)
Shutdown mode, V SHDN = 0V
MIN
2.4
TYP
14
10
MAX
3.6
20
UNITS
V
mA
μA
Logic-Input High Voltage
Logic-Input Low Voltage
V DD - 0.5
0.5
V
V
Logic-Input Bias Current
-40
+40
μA
AC ELECTRICAL CHARACTERISTICS
(MAX2742 EV kit, V DD = +2.4V to +3.6V, V SHDN = V DD , T A = -40 ° C to +85 ° C. Typical values are at V DD = +3V and T A = +25 ° C,
unless otherwise noted.)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL PERFORMANCE
Maximum Conversion Gain
(Notes 2, 3)
91
102
117
dB
Input Frequency
1575.42
MHz
Noise Figure
Return Loss (S11)
LNA/Mixer Input IP3
Output IF Frequency
Measured at quantizer input
f 1 = 1.5MHz and f 2 = 2.0MHz above carrier frequency
4.5
-15
-32
1.023
dB
dB
dBm
MHz
OUTPUT STAGE
Output Rise/Fall Time
Output-Voltage-Level Low
Output-Voltage-Level High
Differential (VOUT+, VOUT-), C L < 20pF
Single ended (DOUT), C L < 20pF
Differential
Single ended
Differential
Single ended
25
5
V DD - 0.9
0
V DD
ns
V
V
2
_______________________________________________________________________________________
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